View 50RIA40M_39020.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Bulletin I2401 rev. A 07/00
50RIA SERIES
MEDIUM POWER THYRISTORS Features
High current rating Excellent dynamic characteristics dv/dt = 1000V/s option Superior surge capabilities Standard package Metric threads version available Types up to 1600V V DRM / V RRM
Stud Version
50 A
Typical Applications
Phase control applications in converters Lighting circuits Battery charges Regulated power supplies and temperature and speed control circuit Can be supplied to meet stringent military, aerospace and other high-reliability requirements
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM
2
10 to 120
50 94 80
50RIA 140 to 160
50 90 80 1200 1257 7.21 6.58 1400 to 1600 110
Units
A C A A A KA2s KA2s V s C
@ 50Hz @ 60Hz
1430 1490 10.18 9.30 100 to 1200
It
@ 50Hz @ 60Hz
V DRM/V RRM tq TJ typical
- 40 to 125
Case Style TO-208AC (TO-65)
www.irf.com
1
50RIA Series
Bulletin I2401 rev. A 07/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
10 20 40 60 50RIA 80 100 120 140 160
V DRM /V RRM , max. repetitive peak and off-state voltage (1) V
100 200 400 600 800 1000 1200 1400 1600
VRSM , maximum nonrepetitive peak voltage (2) V
150 300 500 700 900 1100 1300 1500 1700
I DRM /I RRM max.
@ TJ = TJ max.
mA
15
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/s (2) For voltage pulses with tp 5ms
On-state Conduction
Parameter
IT(AV) IT(RMS) ITSM Max. average on-state current @ Case temperature Max. RMS on-state current Max. peak, one-cycle non-repetitive surge current
50RIA 10 to 120
50 94 80 1430 1490 1200 1255
140 to 160
50 90 80 1200 1257 1010 1057 7.21 6.58 5.10 4.65 72.1 1.02 1.17 4.78 3.97 1.78
Units
A C A A
Conditions
180 sinusoidal conduction
t = 10ms t = 8.3ms t = 10ms t = 8.3ms
No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.
I2t
Maximum I2t for fusing
10.18 9.30 7.20 6.56
KA2 s
t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I2t VT(TO)1
Maximum I2t for fusing Low level value of threshold voltage
101.8 0.94 1.08 4.08 3.34 1.60 200 400
KA2s V
t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. ( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ max.
VT(TO)2 High level value of threshold voltage rt1 rt2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Latching current
m
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. ( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ max.
V mA
Ipk= 157 A, TJ = 25C TJ = 25C. Anode supply 22V, resistive load, Initial IT = 2A Anode supply 6V, resistive load
2
www.irf.com
50RIA Series
Bulletin I2401 rev. A 07/00
Switching
Parameter
di/dt Max. rate of rise of turned-on current VDRM 600V VDRM 1600V td tq Typical delay time 200 100 0.9 s Typical turn-off time 110 A/s
50RIA
Units
Conditions
TC = 125C, VDM = rated VDRM Gate pulse = 20V, 15, tp = 6s, tr = 0.1s max. ITM = (2x rated di/dt) A TC = 25C VDM = rated VDRM ITM = 10A dc resistive circuit Gate pulse = 10V, 15 source, tp = 20s TC = 125C, ITM = 50A, reapplied dv/dt = 20V/s dir/dt = -10A/s, VR=50V
Blocking
Parameter
dv/dt Max. critical rate of rise of off-state voltage
50RIA
200 500 (*)
Units Conditions
V/s TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM
(*) Available with dv/dt = 1000V/s, to complete code add S90 i.e. 50RIA160S90.
Triggering
Parameter
PGM IGM +VGM -VGM IGT Maximum peak gate power PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage DC gate current required to trigger 10 250 100 50 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 3.5 2.5 5.0 0.2 V mA V mA TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C Max. gate current/ voltage not to TJ = TJ max VDRM = rated voltage trigger is the max. value which will not trigger any unit with rated TJ = TJ max VDRM anode-to-cathode applied 20 V
50RIA
10 2.5 2.5
Units Conditions
W A TJ = TJ max, t p 5ms
Max. required gate trigger current/voltage are the lowest value which will trigger all units 6V anode-to-cathode applied
www.irf.com
3
50RIA Series
Bulletin I2401 rev. A 07/00
Thermal and Mechanical Specification
Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range
50RIA
- 40 to 125 - 40 to 125 0.35
Units Conditions
C C K/W DC operation
RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque Min. Max. wt Approximate weight Case style
0.25
K/W
Mounting surface, smooth, flat and greased
2.8 (25) 3.4 (30) 28 (1.0)
Nm (lbf-in) g (oz)
Non-lubricated threads
TO-208AC (TO-65)
See Outline Table
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction Units
0.078 0.094 0.120 0.176 0.294 0.057 0.098 0.130 0.183 0.296 K/W
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
50
1
RIA 160 S90
2 3 4
M
5
1 2 3 4
-
Current code Essential part number Voltage code: Code x 10 = VRRM (See Voltage Rating Table) Critical dv/dt: None = 500V/s (Standard value) S90 = 1000V/s (Special selection)
5
-
None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A M = Stud base TO-208AC (TO-65) M6 X 1
4
www.irf.com
50RIA Series
Bulletin I2401 rev. A 07/00
Outline Table
Case Style TO-208AC (TO-65)
All dimensions in millimeters (inches)
Maximum Allowable Case Temperature (C)
50RIA Series (100V to 1200V) RthJC (DC) = 0.35 K/W
Maximum Allowable Case Temperature (C)
130
130
50RIA Series (100V to 1200V) RthJC (DC) = 0.35 K/W
120
Conduction Angle
120
110
Conduction Period
110 30 100 60
100
90 120 180
90 30 80 0 10 20 60
90 120 40
180 60
DC 70 80
90
0
10
20
30
40
50
60
30
50
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristic
Fig. 2 - Current Ratings Characteristic
www.irf.com
5
50RIA Series
Bulletin
Maximum Average On-state Power Loss (W) 80 70 60 50 40 30
Conduction Angle
I2401 rev. A 07/00
180 120 90 60 30 RMS Limit Maximum Average On-state Power Loss (W) 100 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 DC 180 120 90 60 30
RMS Limit
Conduction Period
20 10 0 0 10 20
50RIA Series (100V to 1200V) T = 125C J 30 40 50
50RIA Series (100V to 1200V) T = 125C J 50 60 70 80
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
1300 Peak Half Sine Wave On-state Current (A) 1200 1100 1000 900 800 700 600 50RIA Series (100V to 1200V) 1 10 100
Fig. 4 - On-state Power Loss Characteristics
1500 Peak Half Sine Wave On-state Current (A) 1400 1300 1200 1100 1000 900 800 700 600 500 0.01 50RIA Series (100V to 1200V) 0.1 Pulse Train Duration (s) 1
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated V RRM Reapplied
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
130
Fig. 6 - Maximum Non-Repetitive Surge Current
130
50RIA Series (1400V to 1600V) RthJC (DC) = 0.35 K/W
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C)
50RIA Series (1400V to 1600V) RthJC (DC) = 0.35 K/W
120
120
110 30
Conduction Angle
110
Conduction Period
100
60
90
120
100
180
90
90 30 80 0
90 60 120 180
DC
80
0
5 10 15 20 25 30 35 40 45 50 55 Average On-state Current (A)
10 20 30 40 50 60 70 80 90 Average On-state Current (A)
Fig. 7 - Current Ratings Characteristics
Fig. 8 - Current Ratings Characteristics
6
www.irf.com
50RIA Series
Bulletin I2401 rev. A 07/00
Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) 90 80 70 60 50 40 30 20 10 0 0 5
Conduction Angle
120 110 100 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 DC 180 120 90 60 30 RMS Limit
Conduction Period
180 120 90 60 30 RMS Limit
50RIA Series (1400V to 1600V) T = 125C J 10 15 20 25 30 35 40 45 50 Average On-state Current (A)
50RIA Series (1400V to 1600V) T = 125C J 50 60 70 80
Average On-state Current (A)
Fig. 9 - On-state Power Loss Characteristics
1100 Peak Half Sine Wave On-state Current (A) 1000 900 800 700 600 500
Fig. 10 - On-state Power Loss Characteristics
1200 Peak Half Sine Wave On-state Current (A) 1100 1000 900 800 700 600 500 50RIA Series (1400V to 1600V) 0.1 Pulse Train Duration (s) 1
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial T = 125C J @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125C J No Voltage Reapplied Rated V RRMReapplied
50RIA Series (1400V to 1600V) 1 10 100
400 0.01
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 11 - Maximum Non-Repetitive Surge Current
1000 Instantaneous On-state Current (A) Instantaneous On-state Current (A)
Fig. 12 - Maximum Non-Repetitive Surge Current
1000
100
100
T = 25C J 10 T = 125C J
T = 25C J 10 T = 125C J
50RIA Series (100V to 1200V) 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5
50RIA Series (1400V to 1600V) 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Instantaneous On-state Voltage (V)
Instantaneous On-state Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
Fig. 14 - Forward Voltage Drop Characteristics
www.irf.com
7
50RIA Series
Bulletin I2401 rev. A 07/00
Transient Thermal Impedance ZthJ-hs (K/W) 1 Steady State Value RthJ-hs = 0.35 K/W
0.1
50RIA Series
0.01 0.001
0.01
0.1 Square Wave Pulse Duration (s)
1
10
Fig. 15 - Thermal Impedance ZthJC Characteristics
100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30 ohms; tr<=0.5 s b) Recommended load line for <=30% rated di/dt : 20V, 65 ohms tr<=1 s 10 (b) (a)
Tj=-40 C Tj=25 C
(1) PGM = 10W, tp = 5ms (2) PGM = 20W, tp = 2.5ms (3) PGM = 50W, tp = 1ms (4) PGM = 100W, tp = 500s
1
Tj=125 C
(1) (2)
(3) (4)
VGD IGD 0.1 0.001 0.01
50RIA Series 0.1 1
Frequency Limited by PG(AV) 10 100 1000
Instantaneous Gate Current (A)
Fig. 16 - Gate Characteristics
8
www.irf.com

▲Up To Search▲

Price & Availability of 50RIA40M

	To Download 50RIA40M Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .